LSK589 SOIC 8L ROHS

LSK589 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en LOW INPUT CAPACITANCE HIGH TRANSCONDUCTANCE = 4.0 nV/√Hz Ciss = 5pF Gfs ≥ 4000µS SOIC-A TO-71 TOP VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150°C Junction Operating Temperature -55 to +150°C SOT-23 TOP VIEW Maximum Power Dissipation, TA = 25°C Continuous Power Dissipation, per side 4 250mW Power Dissipation, total 5 500mW • Maximum Currents Gate Forward Current IG(F) = 50mA Maximum Voltages Gate to Source VGSO = 25V Gate to Drain VGDO = 25V MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC VGS1 − VGS2 Differential Gate to Source Cutoff Voltage MIN IDSS1 IDSS2 Gate to Source Saturation Current Ratio 0.9 CMRR COMMON MODE REJECTION RATIO -20 log│∆VGS1-2/∆VDS│ 85 SYMBOL CHARACTERISTIC MIN TYP MAX UNITS 20 mV 1.0 MAX VDS = 10V, ID = 5mA VDS = 10V, VGS = 0V (Note 2) dB TYP CONDITIONS VDG = 5V to 10V, ID = 5mA UNITS CONDITIONS en Noise Voltage 7 nV/√Hz VDS = 10V, ID = 5mA, f = 100Hz en Noise Voltage 4 nV/√Hz VDS = 10V, ID = 5mA, f = 10kHz CISS Common Source Input Capacitance 5 pF CRSS Common Source Reverse Transfer Capacitance 1.2 pF Linear Integrated Systems VDS = 10V, ID = 5mA, f = 1MHz • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201186 07/23/2019 Rev#A6 ECN# LSK589 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL BVGSS CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS Gate to Source Breakdown Voltage -25 V VDS = 0, ID = 1µA VGS(OFF) Gate to Source Pinch-off Voltage -1.5 -5 V VDS = 10V, ID = 1nA VGS Gate to Source Operating Voltage -0.3 -4.0 V VDS = 10V, ID = 5mA IDSS Drain to Source Saturation Current 7.0 40 mA VDS = 10V, VGS = 0V (Note 2) -50 pA VDG = 10V, ID = 5mA IG Gate Operating Current -1 IGSS Gate to Source Leakage Current -50 pA Vgs = -15V, VDS = 0 GOS Output Conductance F = 1kHz 100 µS VDS = 10V, ID = 5mA NF Noise Figure 1.0 dB VDS = 10V, ID = 5mA, RG = 100KΩ, f = 100Hz µS VDs = 10V, ID = 5mA Gfs Forward Transconductance Gos Output Transconductance f = 1kHz f = 100MHz f = 1kHz f = 100MHz 4000 10000 7000 100 120 PACKAGE DIMENSIONS SOT-23 TO-71 Six Lead Six Lead 0.95 0.230 DIA. 0.209 0.195 DIA. 0.175 1.90 0.030 MAX. 0.210 0.150 0.170 0.115 6 LEADS 6 2 5 3 4 0.35 0.50 2.80 3.00 1.50 1.75 2.60 3.00 0.90 1.30 0.500 MIN. 1 0.019 DIA. 0.016 0.09 0.20 0.100 0.00 0.15 0.050 0.10 0.60 DIMENSIONS IN DIMENSIONS IN MILLIMETERS MILLIMETERS 2 3 5 6 1 45° 0.046 0.036 DIMENSIONS IN INCHES 7 0.048 0.028 DIMENSIONS IN INCHES NOTES: 1. 2. 3. 4. 5. Absolute maximum ratings are limiting values above which serviceability may be impaired. Pulse Test: PW ≤ 300 µs, Duty Cycle ≤ 3% All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only. Derate 2.0 mW/°C above 25°C. Derate 4 mW/°C above 25°C. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201186 07/23/2019 Rev#A6 ECN# LSK589